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| Preliminary data OptiMOS =Small-Signal-Transistor Feature N-Channel Enhancement mode Logic Level Excellent Gate Charge x RDS(on) product (FOM) 150C operating temperature Avalanche rated dv/dt rated Ideal for fast switching applications Package SO 8 Ordering Code Q67042-S4096 Q67042-S4044-A Marking 4410 BSO4410 Type BSO4410 Maximum Ratings,at Tj = 25 C, unless otherwise specified Parameter Continuous drain current TA=25C TA=70C Pulsed drain current TA=25C Avalanche energy, single pulse ID =11.1 A , VDD =25V, RGS =25 Reverse diode dv/dt IS =11.1A, VDS =24V, di/dt=200A/s, Tjmax =150C Gate source voltage Power dissipation TA =25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Product Summary VDS RDS(on) ID 30 13 11.1 V m A Symbol ID Value 11.1 8.9 Unit A ID puls EAS dv/dt VGS Ptot Tj , Tstg 44.5 126 6 20 2.5 -55... +150 55/150/56 mJ kV/s V W C Page 1 2001-09-06 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ 6 cm 2 cooling area 1); t @ min. footprint; t 10 sec. 10 sec. BSO4410 Symbol min. RthJS RthJA - Values typ. max. 35 110 50 Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =1mA Gate threshold voltage, VGS = VDS ID =42A Zero gate voltage drain current VDS =30V, VGS =0V, Tj=25C VDS =30V, VGS =0V, Tj=125C Gate-source leakage current VGS =20V, VDS=0V Drain-source on-state resistance VGS =4.5V, ID=9.2A Drain-source on-state resistance VGS =10V, ID =11.1A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 30 1.2 Values typ. 1.6 max. 2 Unit V A 0.01 10 1 15.6 11 1 100 100 18.8 13 nA m 2001-09-06 Preliminary data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics ID =8.9A BSO4410 Symbol Conditions min. Values typ. 27 1020 420 100 1.2 7.5 33 31 23 max. 1280 530 150 11.3 49 47 35 - Unit Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Ciss Coss Crss RG td(on) tr td(off) tf VGS =0V, VDS =25V, f=1MHz VDD =15V, VGS=10V, ID =11.1A, RG =6.8 - Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Output charge Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0V, IF =2A VR =15V, IF =lS , diF /dt=100A/s Qgs Qgd Qg Qoss VDD =15V, ID =11.1A - 3.2 9.3 17 14.6 3 4 14 21 18 - VDD =15V, ID =11.1A, VGS =0 to 5V VDS =15V, ID =11.1A, VGS =0V V(plateau) VDD =15V, ID=11.1A IS ISM TA=25C - 0.84 29 28 2 44.5 1.2 36 35 Page 3 2001-09-06 Transconductance gfs VDS 2*ID *RDS(on)max , 13.5 - S pF ns nC V A V ns nC Preliminary data 1 Power dissipation Ptot = f (TA ) BSO4410 BSO4410 2 Drain current ID = f (TA) parameter: VGS 10 V 13 BSO4410 2.8 W 2.4 2.2 2 A 11 10 9 Ptot ID 1.8 1.6 1.4 8 7 6 1.2 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 5 4 3 2 1 C TA 160 0 0 20 40 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 C 10 2 BSO4410 4 Transient thermal impedance ZthJS = f (tp ) parameter : D = tp /T 10 2 tp = 200.0s = RD o S( n) V DS BSO4410 A K/W 10 1 1 ms 10 1 ID 10 ms Z thJS 10 0 10 0 D = 0.50 10 -1 10 -1 DC 10 -2 single pulse 10 -2 -1 10 10 0 10 1 V 10 2 10 -3 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 VDS Page 4 60 80 100 120 C TA 160 0.20 0.10 0.05 0.02 0.01 10 1 s 10 3 tp 2001-09-06 Preliminary data 5 Typ. output characteristic ID = f (VDS ); Tj=25C parameter: tp = 80 s BSO4410 BSO4410 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: VGS 42 BSO4410 28 A 24 22 Ptot = 2.5W i VGS [V] a 2.8 b 3.0 3.2 3.4 3.6 3.8 4.0 4.5 10.0 m 36 32 28 24 d e hgf e 20 c d RDS(on) f ID 18 16 14 12 10 8 6 4 2 0 0 0.5 1 1.5 2 2.5 3 3.5 a b c d e f g h i g 20 16 12 8 VGS [V] = h i 4 0 0 d 3.4 e f 3.6 3.8 g 4.0 h i 4.5 10.0 4 V 5 4 8 12 16 A 24 VDS ID 7 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 s 25 8 Typ. forward transconductance gfs = f(ID ); Tj=25C parameter: gfs 50 A 15 g fs 0.5 1 1.5 2 2.5 3 4 ID 10 5 0 0 S 40 35 30 25 20 15 10 5 0 0 VDS V 5 10 15 20 25 30 35 40 A ID 50 Page 5 2001-09-06 Preliminary data 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 11.1 A, VGS = 10 V BSO4410 BSO4410 10 Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS , ID = 42 A 2.5 28 m 24 22 V V GS(th) max. RDS(on) 20 18 16 14 12 10 8 6 4 2 0 -60 -20 20 60 100 C typ. 1.5 min. 98% typ 1 0.5 180 0 -60 -20 20 60 100 Tj C 160 Tj 11 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 4 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 s 10 2 BSO4410 pF A Ciss 10 3 10 1 Coss C Crss 10 2 IF 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -1 0 10 1 0 5 10 15 20 V 30 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS VSD Page 6 2001-09-06 Preliminary data 13 Typ. avalanche energy EAS = f (Tj ) 130 BSO4410 14 Typ. gate charge VGS = f (QGate ) parameter: ID = 11.1 A pulsed 16 V BSO4410 mJ 110 100 12 E AS VGS 90 80 70 60 50 40 30 20 10 0 25 50 75 100 4 6 0.2 VDS max 0.5 VDS max C Tj 150 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) parameter: ID=10 mA 36 BSO4410 V V (BR)DSS 34 33 32 31 30 29 28 27 -60 -20 20 60 100 C 180 Tj Page 7 par.: ID = 11.1 A , VDD = 25 V, RGS = 25 10 8 2 0.8 VDS max 0 0 10 20 30 40 nC 55 QGate 2001-09-06 Preliminary data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. BSO4410 Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2001-09-06 |
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